封装 / 外壳
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id 阈值电压(最大值)@ 漏极电流
3V @ 250µA
场效应晶体管特性
Logic Level Gate
导通电阻(最大值)@漏极电流,栅源电压
250mOhm @ 1.8A, 10V
配置
2 N and 2 P-Channel (Full Bridge)
栅极电荷 (Qg) (最大值) @ Vgs
3.2nC @ 10V
连续漏极电流 (Id) @ 25°C
1.39A, 1.28A
输入电容 (Ciss) (最大值) @ Vds
166pF @ 40V, 141pF @ 50V