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  • image of FET, MOSFET Arrays>TPD3215M
  • image of FET, MOSFET Arrays>TPD3215M
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TPD3215M
FET, MOSFET Arrays
Transphorm
GANFET 2N-CH 600V 70A MODULE
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image of FET, MOSFET Arrays>TPD3215M
TPD3215M
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
TPD3215M
FET, MOSFET Arrays
Transphorm
GANFET 2N-CH 60
FET, MOSFET Arrays
Bulk
-
Product parameters
PDF(1)
PDF(2)
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseModule
Mounting TypeThrough Hole
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max470W
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 100V
Rds On (Max) @ Id, Vgs34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs28nC @ 8V
Supplier Device PackageModule
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