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  • image of Single FETs, MOSFETs>AS2M040120P
  • image of Single FETs, MOSFETs>AS2M040120P
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
AS2M040120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILICON CARBIDE POWER
-
Bulk
50
Price:
$22.7590
inventory: 50
Total number

Quantity

Price

Total price

1

$22.7590

$22.7590

10

$20.2290

$202.2900

100

$17.6880

$1,768.8000

500

$15.0920

$7,546.0000

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product details
image of Single FETs, MOSFETs>AS2M040120P
AS2M040120P
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
AS2M040120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILIC
Single FETs, MOSFETs
Bulk
50 
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs55mOhm @ 40A, 20V
Power Dissipation (Max)330W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2946 pF @ 1000 V
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