SHOW FULL COLUMNS FROM `moban_site` [ RunTime:0.000684s ]
SELECT * FROM `moban_site` WHERE `lang` = 'en' LIMIT 1 [ RunTime:0.000324s ]
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SHOW FULL COLUMNS FROM `moban_news` [ RunTime:0.000599s ]
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SHOW FULL COLUMNS FROM `moban_news_category` [ RunTime:0.000503s ]
SELECT * FROM `moban_news_category` WHERE `lang` = 'en' ORDER BY `id` ASC [ RunTime:0.000285s ]
SHOW FULL COLUMNS FROM `moban_single_page` [ RunTime:0.000534s ]
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SELECT * FROM `moban_single_page` WHERE `id` IN (3,0,26,28,29,30,31,34,36,37,38,41,42,43,44,46,50) AND `state` = 1 AND `lang` = 'en' [ RunTime:0.000582s ]
SELECT * FROM `moban_single_page` WHERE `id` IN (18,0,27,1,2,45) AND `state` = 1 AND `lang` = 'en' [ RunTime:0.000471s ]
SHOW FULL COLUMNS FROM `moban_link` [ RunTime:0.000494s ]
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SHOW FULL COLUMNS FROM `moban_products` [ RunTime:0.000914s ]
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SHOW FULL COLUMNS FROM `moban_category` [ RunTime:0.000579s ]
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[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":279,\"parent_id\":2089,\"name\":\"Single IGBTs\",\"path\":\"0;19;2045;2089;279;\",\"product_count\":4349,\"slug_name\":\"single-igbts\",\"description\":\"Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON (truncated) ... [elapsed: 0.086592 secs]
[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":19,\"parent_id\":0,\"name\":\"Discrete Semiconductor Products\",\"path\":\"0;19;\",\"product_count\":252065,\"slug_name\":\"discrete-semiconductor-products\",\"description\":\"Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circui (truncated) ... [elapsed: 0.090896 secs]
[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":2089,\"parent_id\":2045,\"name\":\"IGBTs\",\"path\":\"0;19;2045;2089;\",\"product_count\":7257,\"slug_name\":\"igbts\",\"description\":\"IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and (truncated) ... [elapsed: 0.08962 secs]
[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":279,\"parent_id\":2089,\"name\":\"Single IGBTs\",\"path\":\"0;19;2045;2089;279;\",\"product_count\":4349,\"slug_name\":\"single-igbts\",\"description\":\"Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON (truncated) ... [elapsed: 0.085021 secs]
[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":279,\"parent_id\":2089,\"name\":\"Single IGBTs\",\"path\":\"0;19;2045;2089;279;\",\"product_count\":4349,\"slug_name\":\"single-igbts\",\"description\":\"Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON (truncated) ... [elapsed: 0.089195 secs]