SI4866DY-T1-E3

Part Number:
SI4866DY-T1-E3
Category:
-
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 12V 11A 8SO
Encapsulation:
-
Package:
Cut Tape (CT)
Quantity:
5418
RoHS Status:
Supported
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MOQ: 1

Qty Price Total
1+ $3.22 $3.22
10+ $2.09 $20.9
100+ $1.44 $144
500+ $1.16 $580
1000+ $1.08 $1080

Product Parameters

Part Status Obsolete
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-SOIC
Power Dissipation (Max) 1.6W (Ta)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Drain to Source Voltage (Vdss) 12 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 17A, 4.5V