SI4464DY-T1-E3

Part Number:
SI4464DY-T1-E3
Category:
-
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 1.7A 8SO
Encapsulation:
-
Package:
Cut Tape (CT)
Quantity:
3657
RoHS Status:
Supported
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MOQ: 1

Qty Price Total
1+ $1.74 $1.74
10+ $1.22 $12.2
100+ $0.87 $87
500+ $0.86 $430

Product Parameters

Part Status Active
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 200 V
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Power Dissipation (Max) 1.5W (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 2.2A, 10V