Tel:
0755-83483730
SI2316DS-T1-E3
- Part Number:
- SI2316DS-T1-E3
- Category:
- -
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET N-CH 30V 2.9A SOT23-3
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Quantity:
- 11479
- RoHS Status:
- Supported
MOQ: 1
| Qty | Price | Total |
|---|---|---|
| 1+ | $1.97 | $1.97 |
| 10+ | $1.25 | $12.5 |
| 100+ | $0.84 | $84 |
| 500+ | $0.66 | $330 |
| 1000+ | $0.61 | $610 |
Product Parameters
| Part Status | Obsolete |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 15 V |
Latest Products
