SI2303BDS-T1

Part Number:
SI2303BDS-T1
Category:
-
Manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 30V 1.49A SOT23-3
Encapsulation:
-
Package:
Tape & Reel (TR)
Quantity:
1600
RoHS Status:
Supported
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MOQ: 0

Qty Price Total
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Product Parameters

Part Status Obsolete
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
FET Type P-Channel
Power Dissipation (Max) 700mW (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 1.49A (Ta)
Rds On (Max) @ Id, Vgs 200mOhm @ 1.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 15 V