ZXMC6A09DN8TA

Home page Product Center

ZXMC6A09DN8TA

Part number:

ZXMC6A09DN8TA

Product Category:

Manufacturer:

Diodes Incorporated

Description:

MOSFET N/P-CH 60V 3.9A/3.7A 8SO

Encapsulation:

Cut Tape (CT)

Packing:

SMD

Quantity

6597

RoHS status:

NO

Share:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

1

$3.09

$3.09

10

$2

$20

100

$1.38

$138

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Power - Max

1.8W

Current - Continuous Drain (Id) @ 25°C

3.9A, 3.7A

Rds On (Max) @ Id, Vgs

45mOhm @ 8.2A, 10V

Gate Charge (Qg) (Max) @ Vgs

24.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1407pF @ 40V, 1580pF @ 40V

Newest products

ZXMHC6A07N8TC

MOSFET 2N/2P-CH 60V 1.39A 8SO

Diodes Incorporated

IRF7389TRPBF

MOSFET N/P-CH 30V 8SO

Infineon Technologies

2N7002DW-7-F

MOSFET 2N-CH 60V 0.23A SOT363

Diodes Incorporated

NVDD5894NLT4G

MOSFET 2N-CH 40V 14A 5DPAK

IRF9952TR

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

Infineon Technologies

SI7540ADP-T1-GE3

SI7540ADP-T1-GE3

MOSFET N/P-CH 20V 12A PPAK SO8

Vishay Siliconix

FDS9945

MOSFET 2N-CH 60V 3.5A 8SOIC

SI9945BDY-T1-GE3

SI9945BDY-T1-GE3

MOSFET 2N-CH 60V 5.3A 8SOIC

Vishay Siliconix

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com

Copyright@2025 All Rights Reserved Technical Support: Cluster Technology