TK4P55D(T6RSS-Q)
Part number:
TK4P55D(T6RSS-Q)
Product Category:
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 550V 4A DPAK
Encapsulation:
Tape & Reel (TR)
Packing:
TO-252
Quantity
1600
RoHS status:
NO
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Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Operating Temperature
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Vgs (Max)
±30V
Power Dissipation (Max)
80W (Tc)
Vgs(th) (Max) @ Id
4.4V @ 1mA
Rds On (Max) @ Id, Vgs
1.88Ohm @ 2A, 10V