TK13P25D,RQ

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TK13P25D,RQ

Part number:

TK13P25D,RQ

Product Category:

Manufacturer:

Toshiba Semiconductor and Storage

Description:

PB-F POWER MOSFET TRANSISTOR DPA

Encapsulation:

Cut Tape (CT)

Packing:

TO-252

Quantity

3985

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.44

$1.01

$10.1

100

$0.77

$77

500

$0.61

$305

1000

$0.56

$560

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

150°C

Drain to Source Voltage (Vdss)

250 V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs

25 nC @ 10 V

Power Dissipation (Max)

96W (Tc)

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Input Capacitance (Ciss) (Max) @ Vds

1100 pF @ 100 V

Rds On (Max) @ Id, Vgs

250mOhm @ 6.5A, 10V

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