SUD35N10-26P-GE3

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SUD35N10-26P-GE3

Part number:

SUD35N10-26P-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 100V 35A TO252

Encapsulation:

Cut Tape (CT)

Packing:

TO-252

Quantity

3291

RoHS status:

PDF：

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Quantity

Price

Total price

$2.63

$1.94

$19.4

100

$1.49

$149

500

$1.2

$600

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

FET Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Qualification

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Supplier Device Package

TO-252AA

Gate Charge (Qg) (Max) @ Vgs

47 nC @ 10 V

Vgs(th) (Max) @ Id

4.4V @ 250µA

Rds On (Max) @ Id, Vgs

26mOhm @ 12A, 10V

Input Capacitance (Ciss) (Max) @ Vds

2000 pF @ 12 V

Power Dissipation (Max)

8.3W (Ta), 83W (Tc)

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Contact number:0755-83483730 Email:president@sdes-ic.com