STD2HNK60Z-1

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STD2HNK60Z-1

Part number:

STD2HNK60Z-1

Product Category:

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 600V 2A IPAK

Encapsulation:

Tube

Packing:

TO-251

Quantity

4040

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$0.65

$0.63

$47.25

150

$0.62

$93

525

$0.6

$315

1050

$0.55

$577.5

2025

$0.55

$1113.75

5025

$0.49

$2462.25

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Product parameters

Mounting Type

Through Hole

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs

15 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drain to Source Voltage (Vdss)

600 V

Power Dissipation (Max)

45W (Tc)

Vgs (Max)

±30V

Package / Case

TO-251-3 Short Leads, IPAK, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds

280 pF @ 25 V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Supplier Device Package

TO-251 (IPAK)

Rds On (Max) @ Id, Vgs

4.8Ohm @ 1A, 10V

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Contact number:0755-83483730 Email:president@sdes-ic.com