STB6N60M2

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STB6N60M2

Part number:

STB6N60M2

Product Category:

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 600V 4.5A D2PAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-263

Quantity

10964

RoHS status:

PDF：

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Quantity

Price

Total price

$2.38

$1.52

$15.2

100

$1.03

$103

500

$0.82

$410

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Power Dissipation (Max)

60W (Tc)

Drain to Source Voltage (Vdss)

600 V

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Vgs (Max)

±25V

Supplier Device Package

D2PAK

Gate Charge (Qg) (Max) @ Vgs

8 nC @ 10 V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2.25A, 10V

Input Capacitance (Ciss) (Max) @ Vds

232 pF @ 100 V

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