STB25NM60N

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STB25NM60N

Part number:

STB25NM60N

Product Category:

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 600V 21A D2PAK

Encapsulation:

Tape & Reel (TR)

Packing:

TO-263

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

150°C (TJ)

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drain to Source Voltage (Vdss)

600 V

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Vgs (Max)

±25V

Supplier Device Package

D2PAK

Power Dissipation (Max)

160W (Tc)

Gate Charge (Qg) (Max) @ Vgs

84 nC @ 10 V

Rds On (Max) @ Id, Vgs

160mOhm @ 10.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds

2400 pF @ 50 V

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