STB24N60DM2

Home page Product Center

STB24N60DM2

Part number:

STB24N60DM2

Product Category:

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 600V 18A D2PAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-263

Quantity

2600

RoHS status:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

$4.46

$2.92

$29.2

100

$2.19

$219

500

$1.78

$890

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs

29 nC @ 10 V

Power Dissipation (Max)

150W (Tc)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Vgs (Max)

±25V

Vgs(th) (Max) @ Id

5V @ 250µA

Rds On (Max) @ Id, Vgs

200mOhm @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds

1055 pF @ 100 V

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

onsemi

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com