STB11NM60T4
Part number:
STB11NM60T4
Product Category:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 650V 11A D2PAK
Encapsulation:
Cut Tape (CT)
Packing:
TO-263
Quantity
3112
RoHS status:
NO
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Quantity
Price
Total price
1
$5.84
$5.84
10
$3.89
$38.9
100
$2.78
$278
500
$2.67
$1335
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Part Status
Not For New Designs
Operating Temperature
-65°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Supplier Device Package
D2PAK
Power Dissipation (Max)
160W (Tc)
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
650 V
Vgs(th) (Max) @ Id
5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 25 V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.5A, 10V