SSW2N60BTM

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SSW2N60BTM

Part number:

SSW2N60BTM

Product Category:

Manufacturer:

Fairchild Semiconductor

Description:

N-CHANNEL POWER MOSFET

Encapsulation:

Bulk

Packing:

TO-263

Quantity

4222

RoHS status:

NO

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Quantity

Price

Total price

533

$0.62

$330.46

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Gate Charge (Qg) (Max) @ Vgs

17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

490 pF @ 25 V

Drain to Source Voltage (Vdss)

600 V

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Vgs (Max)

±30V

Rds On (Max) @ Id, Vgs

5Ohm @ 1A, 10V

Power Dissipation (Max)

3.13W (Ta), 54W (Tc)

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