SQD35N05-26L-GE3

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SQD35N05-26L-GE3

Part number:

SQD35N05-26L-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 55V 30A TO252

Encapsulation:

Tape & Reel (TR)

Packing:

TO-252

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

-

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Power Dissipation (Max)

50W (Tc)

Gate Charge (Qg) (Max) @ Vgs

18 nC @ 5 V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Drain to Source Voltage (Vdss)

55 V

Supplier Device Package

TO-252AA

Rds On (Max) @ Id, Vgs

20mOhm @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds

1175 pF @ 25 V

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