SPB80N06S2-H5

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SPB80N06S2-H5

Part number:

SPB80N06S2-H5

Product Category:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 55V 80A TO263-3

Encapsulation:

Tape & Reel (TR)

Packing:

TO-263

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

FET Feature

-

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

-

Qualification

-

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Power Dissipation (Max)

300W (Tc)

Gate Charge (Qg) (Max) @ Vgs

155 nC @ 10 V

Drain to Source Voltage (Vdss)

55 V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Supplier Device Package

PG-TO263-3-2

Input Capacitance (Ciss) (Max) @ Vds

5500 pF @ 25 V

Vgs(th) (Max) @ Id

4V @ 230µA

Rds On (Max) @ Id, Vgs

5.5mOhm @ 80A, 10V

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