SIS496EDNT-T1-GE3

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SIS496EDNT-T1-GE3

Part number:

SIS496EDNT-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 30V 50A PPAK1212-8

Encapsulation:

Tape & Reel (TR)

Packing:

DFN3*3

Quantity

1600

RoHS status:

PDF：

Price inquiry

Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Power Dissipation (Max)

52W (Tc)

Gate Charge (Qg) (Max) @ Vgs

45 nC @ 10 V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 20A, 10V

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Input Capacitance (Ciss) (Max) @ Vds

1515 pF @ 15 V

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SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com