SIRA00DP-T1-GE3

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SIRA00DP-T1-GE3

Part number:

SIRA00DP-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 30V 100A PPAK SO-8

Encapsulation:

Cut Tape (CT)

Packing:

QFN8

Quantity

5479

RoHS status:

PDF：

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Quantity

Price

Total price

$2.64

$1.96

$19.6

100

$1.43

$143

500

$1.19

$595

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Drain to Source Voltage (Vdss)

30 V

Gate Charge (Qg) (Max) @ Vgs

220 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Vgs(th) (Max) @ Id

2.2V @ 250µA

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Power Dissipation (Max)

6.25W (Ta), 104W (Tc)

Vgs (Max)

+20V, -16V

Rds On (Max) @ Id, Vgs

1mOhm @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds

11700 pF @ 15 V

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