SIHP33N60E-GE3

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SIHP33N60E-GE3

Part number:

SIHP33N60E-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 600V 33A TO220AB

Encapsulation:

Tube

Packing:

TO-220

Quantity

2161

RoHS status:

PDF：

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Quantity

Price

Total price

$5.51

$3.87

$193.5

100

$3.65

$365

500

$3.06

$1530

1000

$3.03

$3030

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Product parameters

Mounting Type

Through Hole

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

Grade

Qualification

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Operating Temperature

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs

150 nC @ 10 V

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Vgs (Max)

±30V

Power Dissipation (Max)

278W (Tc)

Rds On (Max) @ Id, Vgs

99mOhm @ 16.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds

3508 pF @ 100 V

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