SIHG28N65EF-GE3

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SIHG28N65EF-GE3

Part number:

SIHG28N65EF-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 650V 28A TO247AC

Encapsulation:

Tube

Packing:

TO-247

Quantity

1600

RoHS status:

NO

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Quantity

Price

Total price

500

$3.43

$1715

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Product parameters

Mounting Type

Through Hole

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

650 V

Gate Charge (Qg) (Max) @ Vgs

146 nC @ 10 V

Power Dissipation (Max)

250W (Tc)

Rds On (Max) @ Id, Vgs

117mOhm @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds

3249 pF @ 100 V

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