SIHD2N80E-GE3

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SIHD2N80E-GE3

Part number:

SIHD2N80E-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 800V 2.8A DPAK

Encapsulation:

Tube

Packing:

Quantity

1600

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.82

$1.26

$12.6

100

$0.94

$94

500

$0.77

$385

1000

$0.68

$680

3000

$0.6

$1800

6000

$0.58

$3480

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss)

800 V

Vgs (Max)

±30V

Supplier Device Package

TO-252AA

Power Dissipation (Max)

62.5W (Tc)

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Gate Charge (Qg) (Max) @ Vgs

19.6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

315 pF @ 100 V

Rds On (Max) @ Id, Vgs

2.75Ohm @ 1A, 10V

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