SI7686DP-T1-E3

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SI7686DP-T1-E3

Part number:

SI7686DP-T1-E3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 30V 35A PPAK SO-8

Encapsulation:

Cut Tape (CT)

Packing:

QFN

Quantity

4600

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.98

$1.5

$15

100

$1.09

$109

500

$0.86

$430

1000

$0.82

$820

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs

26 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Input Capacitance (Ciss) (Max) @ Vds

1220 pF @ 15 V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 13.8A, 10V

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Power Dissipation (Max)

5W (Ta), 37.9W (Tc)

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Contact number:0755-83483730 Email:president@sdes-ic.com