SI7450DP-T1-GE3

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SI7450DP-T1-GE3

Part number:

SI7450DP-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 200V 3.2A PPAK SO-8

Encapsulation:

Cut Tape (CT)

Packing:

QFN8

Quantity

8551

RoHS status:

PDF：

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Quantity

Price

Total price

$3.28

$2.3

$23

100

$1.78

$178

500

$1.63

$815

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

1.9W (Ta)

Rds On (Max) @ Id, Vgs

80mOhm @ 4A, 10V

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

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Contact number:0755-83483730 Email:president@sdes-ic.com