SI7190DP-T1-GE3

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SI7190DP-T1-GE3

Part number:

SI7190DP-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 250V 18.4A PPAK SO-8

Encapsulation:

Tape & Reel (TR)

Packing:

QFN

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id

4V @ 250µA

Vgs (Max)

±20V

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

250 V

Gate Charge (Qg) (Max) @ Vgs

72 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Current - Continuous Drain (Id) @ 25°C

18.4A (Tc)

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Power Dissipation (Max)

5.4W (Ta), 96W (Tc)

Rds On (Max) @ Id, Vgs

118mOhm @ 4.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds

2214 pF @ 125 V

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