SI7106DN-T1-GE3

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SI7106DN-T1-GE3

Part number:

SI7106DN-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 20V 12.5A PPAK1212-8

Encapsulation:

Cut Tape (CT)

Packing:

QFN

Quantity

4485

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$2.57

$1.71

$17.1

100

$1.23

$123

500

$1.18

$590

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id

1.5V @ 250µA

Drain to Source Voltage (Vdss)

20 V

Vgs (Max)

±12V

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Current - Continuous Drain (Id) @ 25°C

12.5A (Ta)

Power Dissipation (Max)

1.5W (Ta)

Gate Charge (Qg) (Max) @ Vgs

27 nC @ 4.5 V

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Rds On (Max) @ Id, Vgs

6.2mOhm @ 19.5A, 4.5V

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Contact number:0755-83483730 Email:president@sdes-ic.com