SI4686DY-T1-GE3

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SI4686DY-T1-GE3

Part number:

SI4686DY-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 30V 18.2A 8SO

Encapsulation:

Cut Tape (CT)

Packing:

SO-8

Quantity

7839

RoHS status:

PDF：

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Quantity

Price

Total price

$2.31

$1.48

$14.8

100

$100

500

$0.8

$400

1000

$0.76

$760

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

8-SOIC

Gate Charge (Qg) (Max) @ Vgs

26 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Drain to Source Voltage (Vdss)

30 V

Input Capacitance (Ciss) (Max) @ Vds

1220 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C

18.2A (Tc)

Rds On (Max) @ Id, Vgs

9.5mOhm @ 13.8A, 10V

Power Dissipation (Max)

3W (Ta), 5.2W (Tc)

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SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com