SI4166DY-T1-GE3

Home page Product Center

SI4166DY-T1-GE3

Part number:

SI4166DY-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 30V 30.5A 8SO

Encapsulation:

Cut Tape (CT)

Packing:

SO-8

Quantity

9327

RoHS status:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

$0.95

$0.83

$8.3

100

$0.71

$71

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

8-SOIC

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Drain to Source Voltage (Vdss)

30 V

Gate Charge (Qg) (Max) @ Vgs

65 nC @ 10 V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Power Dissipation (Max)

3W (Ta), 6.5W (Tc)

Input Capacitance (Ciss) (Max) @ Vds

2730 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C

30.5A (Tc)

Rds On (Max) @ Id, Vgs

3.9mOhm @ 15A, 10V

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

onsemi

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com