SI4100DY-T1-GE3

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SI4100DY-T1-GE3

Part number:

SI4100DY-T1-GE3

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 100V 6.8A 8SO

Encapsulation:

Cut Tape (CT)

Packing:

SOP8

Quantity

5580

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.39

$1.01

$10.1

100

$0.77

$77

500

$0.69

$345

1000

$0.64

$640

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

8-SOIC

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Vgs(th) (Max) @ Id

4.5V @ 250µA

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

2.5W (Ta), 6W (Tc)

Rds On (Max) @ Id, Vgs

63mOhm @ 4.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds

600 pF @ 50 V

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Contact number:0755-83483730 Email:president@sdes-ic.com