IRLD110

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IRLD110

Part number:

IRLD110

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 100V 1A 4DIP

Encapsulation:

Tube

Packing:

DIP-4

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Through Hole

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

FET Feature

-

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

-

Qualification

-

Supplier Device Package

4-HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Power Dissipation (Max)

1.3W (Ta)

Input Capacitance (Ciss) (Max) @ Vds

250 pF @ 25 V

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Vgs (Max)

±10V

Gate Charge (Qg) (Max) @ Vgs

6.1 nC @ 5 V

Rds On (Max) @ Id, Vgs

540mOhm @ 600mA, 5V

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