IRFD220

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IRFD220

Part number:

IRFD220

Product Category:

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 200V 800MA 4DIP

Encapsulation:

Tube

Packing:

DIP-4

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Through Hole

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Vgs (Max)

±20V

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

200 V

Power Dissipation (Max)

1W (Ta)

Supplier Device Package

4-HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

Gate Charge (Qg) (Max) @ Vgs

14 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

260 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

800mA (Ta)

Rds On (Max) @ Id, Vgs

800mOhm @ 480mA, 10V

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