IPD60R600E6

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IPD60R600E6

Part number:

IPD60R600E6

Product Category:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 600V 7.3A TO252-3

Encapsulation:

Tape & Reel (TR)

Packing:

TO-252

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Discontinued at

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Power Dissipation (Max)

63W (Tc)

Supplier Device Package

PG-TO252-3

Rds On (Max) @ Id, Vgs

600mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

20.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

440 pF @ 100 V

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