IPB06N03LA

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IPB06N03LA

Part number:

IPB06N03LA

Product Category:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 25V 50A TO263-3

Encapsulation:

Tape & Reel (TR)

Packing:

TO-263

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

-

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

-

Qualification

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Gate Charge (Qg) (Max) @ Vgs

22 nC @ 5 V

Drain to Source Voltage (Vdss)

25 V

Power Dissipation (Max)

83W (Tc)

Vgs(th) (Max) @ Id

2V @ 40µA

Input Capacitance (Ciss) (Max) @ Vds

2653 pF @ 15 V

Supplier Device Package

PG-TO263-3-2

Rds On (Max) @ Id, Vgs

5.9mOhm @ 30A, 10V

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