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IPB027N10N3G
Part number:
IPB027N10N3G
Product Category:
Manufacturer:
UMW
Description:
MOSFET N-CH 100V 120A D2PAK
Encapsulation:
Cut Tape (CT)
Packing:
TO-263
Quantity
2256
RoHS status:
NO
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Quantity
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Quantity
Price
Total price
1
$2.57
$2.57
10
$1.65
$16.5
100
$1.12
$112
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Product parameters
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C ~ 175°C
Supplier Device Package
TO-263-3
Current - Continuous Drain (Id) @ 25°C
120A
Power Dissipation (Max)
300W
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