HUF75639S3ST

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HUF75639S3ST

Part number:

HUF75639S3ST

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 100V 56A D2PAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-263

Quantity

2280

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$3.52

$2.46

$24.6

100

$1.71

$171

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Vgs (Max)

±20V

FET Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Qualification

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds

2000 pF @ 25 V

Power Dissipation (Max)

200W (Tc)

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Gate Charge (Qg) (Max) @ Vgs

130 nC @ 20 V

Rds On (Max) @ Id, Vgs

25mOhm @ 56A, 10V

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