HGTP5N120BND

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HGTP5N120BND

Part number:

HGTP5N120BND

Product Category:

Manufacturer:

onsemi

Description:

IGBT NPT 1200V 21A TO-220-3

Encapsulation:

Tube

Packing:

TO-220

Quantity

1600

RoHS status:

PDF：

Price inquiry

Product parameters

Mounting Type

Through Hole

Part Status

Discontinued at

Package / Case

TO-220-3

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

TO-220-3

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

1200 V

Current - Collector Pulsed (Icm)

40 A

IGBT Type

NPT

Gate Charge

53 nC

Reverse Recovery Time (trr)

65 ns

Power - Max

167 W

Current - Collector (Ic) (Max)

21 A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 5A

Switching Energy

450µJ (on), 390µJ (off)

Td (on/off) @ 25°C

22ns/160ns

Test Condition

960V, 5A, 25Ohm, 15V

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SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com