HGT1S10N120BNS

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HGT1S10N120BNS

Part number:

HGT1S10N120BNS

Product Category:

Manufacturer:

onsemi

Description:

IGBT NPT 1200V 35A TO-263

Encapsulation:

Tube

Packing:

SOT-263

Quantity

1600

RoHS status:

PDF：

Price inquiry

Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 150°C (TJ)

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

1200 V

Power - Max

298 W

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Gate Charge

100 nC

IGBT Type

NPT

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Current - Collector Pulsed (Icm)

80 A

Current - Collector (Ic) (Max)

35 A

Td (on/off) @ 25°C

23ns/165ns

Test Condition

960V, 10A, 10Ohm, 15V

Switching Energy

320µJ (on), 800µJ (off)

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SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com