FQU2N100TU

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FQU2N100TU

Part number:

FQU2N100TU

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 1000V 1.6A IPAK

Encapsulation:

Tube

Packing:

TO-251

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Through Hole

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

1000 V

Vgs (Max)

±30V

Supplier Device Package

IPAK

Package / Case

TO-251-3 Short Leads, IPAK, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds

520 pF @ 25 V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.5 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Rds On (Max) @ Id, Vgs

9Ohm @ 800mA, 10V

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