FQP4N90C
Part number:
FQP4N90C
Product Category:
Manufacturer:
onsemi
Description:
MOSFET N-CH 900V 4A TO220-3
Encapsulation:
Tube
Packing:
TO-220
Quantity
1600
RoHS status:
NO
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Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Drain to Source Voltage (Vdss)
900 V
Power Dissipation (Max)
140W (Tc)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Rds On (Max) @ Id, Vgs
4.2Ohm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds
960 pF @ 25 V