FQP11P06

Home page Product Center

FQP11P06

Part number:

FQP11P06

Product Category:

Manufacturer:

onsemi

Description:

MOSFET P-CH 60V 11.4A TO220-3

Encapsulation:

Tube

Packing:

TO-220

Quantity

1600

RoHS status:

NO

Share:

PDF：

Price inquiry

Product parameters

Part Status

Obsolete

Mounting Type

Through Hole

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

-

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

-

Qualification

-

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

FET Type

P-Channel

Drain to Source Voltage (Vdss)

60 V

Gate Charge (Qg) (Max) @ Vgs

17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

550 pF @ 25 V

Vgs (Max)

±25V

Power Dissipation (Max)

53W (Tc)

Current - Continuous Drain (Id) @ 25°C

11.4A (Tc)

Rds On (Max) @ Id, Vgs

175mOhm @ 5.7A, 10V

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com

Copyright@2025 All Rights Reserved Technical Support: Cluster Technology