FQD2N60CTM

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FQD2N60CTM

Part number:

FQD2N60CTM

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 600V 1.9A DPAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-252

Quantity

4997

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.23

$0.87

$8.7

100

$0.58

$58

500

$0.47

$235

1000

$0.42

$420

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss)

600 V

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 10 V

Vgs (Max)

±30V

Current - Continuous Drain (Id) @ 25°C

1.9A (Tc)

Supplier Device Package

TO-252AA

Power Dissipation (Max)

2.5W (Ta), 44W (Tc)

Input Capacitance (Ciss) (Max) @ Vds

235 pF @ 25 V

Rds On (Max) @ Id, Vgs

4.7Ohm @ 950mA, 10V

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