FQD1N80TM

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FQD1N80TM

Part number:

FQD1N80TM

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 800V 1A DPAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-252

Quantity

7134

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.38

$0.91

$9.1

100

$0.64

$64

500

$0.57

$285

1000

$0.52

$520

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss)

800 V

Vgs (Max)

±30V

Vgs(th) (Max) @ Id

5V @ 250µA

Supplier Device Package

TO-252AA

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Rds On (Max) @ Id, Vgs

20Ohm @ 500mA, 10V

Gate Charge (Qg) (Max) @ Vgs

7.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

195 pF @ 25 V

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