FQD1N60CTM

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FQD1N60CTM

Part number:

FQD1N60CTM

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 600V 1A DPAK

Encapsulation:

Tape & Reel (TR)

Packing:

TO-252

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds

170 pF @ 25 V

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss)

600 V

Vgs (Max)

±30V

Supplier Device Package

TO-252AA

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Rds On (Max) @ Id, Vgs

11.5Ohm @ 500mA, 10V

Gate Charge (Qg) (Max) @ Vgs

6.2 nC @ 10 V

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