FQD19N10LTM

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FQD19N10LTM

Part number:

FQD19N10LTM

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 100V 15.6A DPAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-252

Quantity

10363

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.5

$1.01

$10.1

100

$0.73

$73

500

$0.58

$290

1000

$0.53

$530

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds

870 pF @ 25 V

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Operating Temperature

-55°C ~ 155°C (TJ)

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs

100mOhm @ 7.8A, 10V

Supplier Device Package

TO-252AA

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Current - Continuous Drain (Id) @ 25°C

15.6A (Tc)

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