FQD13N10LTM

Home page Product Center

FQD13N10LTM

Part number:

FQD13N10LTM

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 100V 10A DPAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-252

Quantity

5415

RoHS status:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

$0.72

$7.2

100

$0.48

$48

500

$0.39

$195

1000

$0.35

$350

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 5 V

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Operating Temperature

-55°C ~ 155°C (TJ)

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds

520 pF @ 25 V

Supplier Device Package

TO-252AA

Rds On (Max) @ Id, Vgs

180mOhm @ 5A, 10V

Power Dissipation (Max)

2.5W (Ta), 40W (Tc)

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

onsemi

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com