FQB55N10TM

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FQB55N10TM

Part number:

FQB55N10TM

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 100V 55A D2PAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-263

Quantity

2153

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$2.55

$1.92

$19.2

100

$1.42

$142

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Qualification

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Vgs (Max)

±25V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Gate Charge (Qg) (Max) @ Vgs

98 nC @ 10 V

Rds On (Max) @ Id, Vgs

26mOhm @ 27.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds

2730 pF @ 25 V

Power Dissipation (Max)

3.75W (Ta), 155W (Tc)

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