Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 25 V
Supplier Device Package
TO-3PN
Power Dissipation (Max)
214W (Tc)
Rds On (Max) @ Id, Vgs
23mOhm @ 35A, 10V